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| SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High DC current gain. +0.2 9.70 -0.2 Low collector saturation voltage. High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VCES VEBO IC ICP IB PC Rating 50 20 40 8 5 8 0.5 1.0 10 150 -55 to +150 Unit V V V V A A A W W * Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO hFE Testconditons VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A VCE (sat) IC = 4 A, IB = 40 mA VBE fT Cob VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz 150 45 20 800 250 0.5 1.2 V V MHz pF 3200 Min Typ Max 100 100 Unit nA nA V Marking Marking C4684 3.80 www.kexin.com.cn 1 |
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